@inproceedings{oai:repo.lib.tut.ac.jp:00001491,
 author = {Inada, Ryoji and Okumura, Yasuhiro and Ohtsu, Ryosuke and Oota, Akio and Li, Chengshan and Zhang, Pingxiang and 稲田, 亮史 and 奥村, 康裕 and 大津, 良介 and 太田, 昭男 and 李, 成山 and 張, 平祥},
 book = {Proceedings of the 24th International Cryogenic Engineering Conference and International Cryogenic Materials Conference (ICEC 24 – ICMC 2012 )},
 month = {},
 note = {978-4-9906959-0-3, This paper presents our recent progress in development of low AC loss Bi2223 tapes with interfilamentary oxide barriers. To suppress the secondary effect on Bi2223 phase formation in the filaments during sintering, SrZrO3 was selected as barrier materials. In addition, small amount of Bi2212 was mixed with SrZrO3 to improve its ductility for cold working. Both controlling barrier thickness and reducing a final tape width down to 2.7 mm, critical current densities Jc at 77 K and in self-field attained to 26.8 kA/cm2 for a non-twisted barrier tape, and 16.5-23.6 kA/cm2 for twisted one with twist lengths Lt = 4-9
mm. For the tape with the shortest Lt = 4 mm, coupling frequency fc exceeded 250 Hz in an AC transverse field in perpendicular to the broader face of a tape. To our best knowledge, this fc is the highest one for Bi2223 tapes with selffield Jc > 15 kA/cm2. By addressing these achievements, noticeable loss reduction under a perpendicular field was successfully confirmed around 50 Hz.},
 pages = {857--860},
 publisher = {Cryogenics and Superconductivity Society of Japan},
 title = {Development of low AC loss Bi2223 tapes with interfilamentary oxide barriers},
 year = {2013}
}